In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...
TSMC’s roadmap announcement for their 28 nm node yesterday has stirred considerable controversy already. The issue is the company’s decision to divide their process development into two tracks: one to ...
In this work, we will demonstrate first negative capacitance transistor (NCFET) with ferroelectric HfO2 thin film by establishing device design and developing material for ultralow power operation. A ...
If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...
It has been long known that complementary metal-oxide semiconductor (CMOS) transistors suffer from a scaling issue. As CMOS field-effect transistors (FETs) get smaller, they become less power ...
The electron transport properties of graphene devices are critical to many applications, but our understanding of these properties is still incomplete, in spite of rapid advances in recent years. One ...
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