TI's TMCS2100-Q1 uses multiaxial sensing to reject crosstalk in coreless Hall-effect current sensors for traction inverters.

The new series offers up to 83,000 µF, 300 V ratings and 10,000-hour endurance for demanding compact power applications.

The new devices combine 30 A current capability, 1,500 VDC dielectric withstand voltage and operation up to +150°C.

The sensor combines 2µs output refresh, speeds above 50,000 rpm and three-axis magnetic sensing in a compact DFN-6 package.

Here’s a RoundUp of this month’s must-read news about silicon carbide (SiC), gallium nitride (GaN), and Wide Bandgap ...

Rad-hard MOSFETs, GaN transistors and other HiRel devices provide reliable power for the telescope’s demanding space mission.

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on Navitas’ Claros Acquisition, ...

GaN HEMTs with gate-termination extensions show improved single-event hardness, enabling higher operating voltages in LEO ...

The nPZ2100 manages sensors and peripherals autonomously, reducing MCU wake-ups and energy consumption in battery-powered ...

Navitas CEO Chris Allexandre and Claros CEO Dan Kultran discuss the planned acquisition, Claros's 40 A IVR chip, and the deal ...