Power Integrations Launches 1700 V GaN Switcher IC. With a voltage of 1700 V, this marks a notable improvement over earlier 900 V and 1250 V devices released in 2023. Today Power Integrations ...

The efficiency and power density advantages of GaN are essential in meeting global energy goals without increasing costs. Global energy consumption is rising, driven by population growth and economic ...

The Sommerfeld model represents a decisive step forward compared to the Drude-Lorentz model. To repeat the experiment proposed in the previous tutorial (measurement of the effective mass of electrons ...

The initial efforts of this collaboration will focus on silicon carbide (SiC) MOSFETs in QDPAK for onboard chargers. Nexperia has announced a strategic cooperation with KOSTAL, a prominent automotive ...

The new GaN power discretes provide improved figures of merit to ensure competitive switching performance in focus applications. Infineon Technologies AG has introduced a new family of high-voltage ...

The measurement of voltage, current and the switching transitions each present their own challenges. At high voltages, the risk of injury and equipment damage increases. High-voltage floating-node ...

Recent advances in the design of a new generation of small, modular and scalable nuclear reactors can be a panacea for DC energy demand. The world’s first data center (DC)—in the sense of a computer ...

The new next-generation IBC series delivers high power density and efficiency for AI data centers. Flex Power Modules announced the BMR316, a high-performance non-isolated, unregulated DC/DC ...